2SD2226KT146W datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2226KT146W Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
59
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
150mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2226
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
820 @ 1mA 5V
Current - Collector Cutoff (Max)
300nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
100MHz
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
12V
hFE Min
1200
Continuous Collector Current
150mA
Height
1.2mm
Length
3mm
Width
1.8mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.038189
$0.038189
500
$0.028080
$14.04
1000
$0.023400
$23.4
2000
$0.021468
$42.936
5000
$0.020063
$100.315
10000
$0.018664
$186.64
15000
$0.018050
$270.75
50000
$0.017748
$887.4
2SD2226KT146W Product Details
2SD2226KT146W Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 820 @ 1mA 5V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.250MHz is present in the transition frequency.This device can take an input voltage of 50V volts before it breaks down.Maximum collector currents can be below 150mA volts.
2SD2226KT146W Features
the DC current gain for this device is 820 @ 1mA 5V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 12V the current rating of this device is 150mA a transition frequency of 250MHz
2SD2226KT146W Applications
There are a lot of ROHM Semiconductor 2SD2226KT146W applications of single BJT transistors.