BCX54,115 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a transition frequency of 180MHz in the part.There is a breakdown input voltage of 45V volts that it can take.Maximum collector currents can be below 1A volts.

BCX54,115 Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

BCX54,115 Applications

There are a lot of Nexperia USA Inc. BCX54,115 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter