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BF820W,135

  • BF820W,135
  • BF820W,135

BF820W,135

BF820W,135

Nexperia USA Inc.

BF820W,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BF820W,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BF820
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Gain Bandwidth Product 60MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 60MHz
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.6 V
Collector-Base Capacitance-Max 1.6pF
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.36000 $0.36
500 $0.3564 $178.2
1000 $0.3528 $352.8
1500 $0.3492 $523.8
2000 $0.3456 $691.2
2500 $0.342 $855
BF820W,135 Product Details

BF820W,135 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 25mA 20V.When VCE saturation is 600mV @ 5mA, 30mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 60MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 50mA volts is possible.

BF820W,135 Features


the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

BF820W,135 Applications


There are a lot of Nexperia USA Inc. BF820W,135 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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