MMBTA56LT3G Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).A transition frequency of 50MHz is present in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA56LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA56LT3G Applications
There are a lot of ON Semiconductor MMBTA56LT3G applications of single BJT transistors.
- Driver
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- Muting
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- Interface
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- Inverter
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