PBSS5250X,135 Overview

In this device, the DC current gain is 200 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.The maximum collector current is 2A volts.

PBSS5250X,135 Features

the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS5250X,135 Applications

There are a lot of Nexperia USA Inc. PBSS5250X,135 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver