MJE200G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 45 @ 2A 1V.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.When VCE saturation is 1.8V @ 1A, 5A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 8V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).As you can see, the part has a transition frequency of 65MHz.In extreme cases, the collector current can be as low as 5A volts.

MJE200G Features

the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz

MJE200G Applications

There are a lot of ON Semiconductor MJE200G applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting