BCW68FE6327HTSA1 Overview

DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 2V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.In this part, there is a transition frequency of 200MHz.During maximum operation, collector current can be as low as 800mA volts.

BCW68FE6327HTSA1 Features

the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz

BCW68FE6327HTSA1 Applications

There are a lot of Infineon Technologies BCW68FE6327HTSA1 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting