BCW68FE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCW68FE6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
-45V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-800mA
Frequency
200MHz
Base Part Number
BCW68
Number of Elements
1
Configuration
SINGLE
Power Dissipation
330mW
Halogen Free
Not Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Current - Collector (Ic) (Max)
800mA
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
2V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.160989
$0.160989
10
$0.151877
$1.51877
100
$0.143280
$14.328
500
$0.135170
$67.585
1000
$0.127519
$127.519
BCW68FE6327HTSA1 Product Details
BCW68FE6327HTSA1 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 2V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.In this part, there is a transition frequency of 200MHz.During maximum operation, collector current can be as low as 800mA volts.
BCW68FE6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 2V the current rating of this device is -800mA a transition frequency of 200MHz
BCW68FE6327HTSA1 Applications
There are a lot of Infineon Technologies BCW68FE6327HTSA1 applications of single BJT transistors.