2N5210BU Overview

This device has a DC current gain of 200 @ 100μA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 4.5V, an efficient operation can be achieved.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 30MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2N5210BU Features

the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz

2N5210BU Applications

There are a lot of ON Semiconductor 2N5210BU applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface