BST52,135 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 1.3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In this part, there is a transition frequency of 200MHz.There is a breakdown input voltage of 80V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.

BST52,135 Features

the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BST52,135 Applications

There are a lot of Nexperia USA Inc. BST52,135 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter