2SCR553PT100 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 50mA 2V.When VCE saturation is 350mV @ 35mA, 700mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 2A in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The part has a transition frequency of 360MHz.The breakdown input voltage is 50V volts.The maximum collector current is 2A volts.

2SCR553PT100 Features

the DC current gain for this device is 180 @ 50mA 2V
the vce saturation(Max) is 350mV @ 35mA, 700mA
the emitter base voltage is kept at 6V
a transition frequency of 360MHz

2SCR553PT100 Applications

There are a lot of ROHM Semiconductor 2SCR553PT100 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter