FJPF13007H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJPF13007H2TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
40W
Current Rating
8A
Frequency
4MHz
Base Part Number
FJPF13007
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
26 @ 2A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
5
Height
15.87mm
Length
10.16mm
Width
4.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.98000
$0.98
10
$0.87200
$8.72
100
$0.68010
$68.01
500
$0.56180
$280.9
FJPF13007H2TU Product Details
FJPF13007H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 26 @ 2A 5V.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation (Max) of 3V @ 2A, 8A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.In this part, there is a transition frequency of 4MHz.A maximum collector current of 8A volts can be achieved.
FJPF13007H2TU Features
the DC current gain for this device is 26 @ 2A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 3V @ 2A, 8A the emitter base voltage is kept at 9V the current rating of this device is 8A a transition frequency of 4MHz
FJPF13007H2TU Applications
There are a lot of ON Semiconductor FJPF13007H2TU applications of single BJT transistors.