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FJPF13007H2TU

FJPF13007H2TU

FJPF13007H2TU

ON Semiconductor

FJPF13007H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJPF13007H2TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation40W
Current Rating8A
Frequency 4MHz
Base Part Number FJPF13007
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 26 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Collector Emitter Breakdown Voltage400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 5
Height 15.87mm
Length 10.16mm
Width 4.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5323 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.98000$0.98
10$0.87200$8.72
100$0.68010$68.01
500$0.56180$280.9

FJPF13007H2TU Product Details

FJPF13007H2TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 26 @ 2A 5V.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation (Max) of 3V @ 2A, 8A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.In this part, there is a transition frequency of 4MHz.A maximum collector current of 8A volts can be achieved.

FJPF13007H2TU Features


the DC current gain for this device is 26 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz

FJPF13007H2TU Applications


There are a lot of ON Semiconductor FJPF13007H2TU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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