NXP3875GR Overview

This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 200mA to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 80MHz is present in the part.When collector current reaches its maximum, it can reach 150mA volts.

NXP3875GR Features

the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz

NXP3875GR Applications

There are a lot of Nexperia USA Inc. NXP3875GR applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter