BUK7K6R2-40EX datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available on our website
SOT-23
BUK7K6R2-40EX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-1205, 8-LFPAK56
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Max Power Dissipation
68W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PDSO-G6
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
9.5 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
32.3nC @ 10V
Rise Time
16ns
Drain to Source Voltage (Vdss)
40V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
40A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Avalanche Energy Rating (Eas)
157 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BUK7K6R2-40EX Product Details
BUK7K6R2-40EX Description
The BUK7K6R2-40EX is a Dual N-channel 40 V, 5.8 mΩ standard level MOSFET. TrenchMOS-based dual standard level N-channel MOSFETs in an LFPAK56D (Dual Power-SO8) package. To meet the requirements of AEC Q101, this product has been designed and certified for use in high performance automotive applications.
BUK7K6R2-40EX Features
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) of greater than 1 V at 175 °C