BUK9K29-100E,115

new-10%

Manufacturer part number:BUK9K29-100E,115

Manufacturer:Nexperia USA Inc.

Description:BUK9K29 Series 100 V 30 A Dual N-Channel TrenchMOS Logic Level FET - LFPAK-56D-8

Case Package:SOT-23

Datasheet:BUK9K29-100E,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-1205, 8-LFPAK56
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Max Power Dissipation	68W
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	8
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	68W
Case Connection	DRAIN
Turn On Delay Time	6.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3491pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Rise Time	6.4ns
Fall Time (Typ)	35.1 ns
Turn-Off Delay Time	67.3 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	10V
Max Dual Supply Voltage	100V
Drain to Source Breakdown Voltage	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant