BSM120D12P2C005

new-10%

Manufacturer part number:BSM120D12P2C005

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 1200V 120A MODULE

Case Package:SOT-23

Datasheet:BSM120D12P2C005 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Screw
Package / Case	Module
Number of Pins	10
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Subcategory	FET General Purpose Powers
Max Power Dissipation	780W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUFM-X8
Number of Elements	2
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Channels	1
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Vgs(th) (Max) @ Id	2.7V @ 22mA
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Drain to Source Voltage (Vdss)	1200V 1.2kV
Continuous Drain Current (ID)	120A
Threshold Voltage	2.7V
Gate to Source Voltage (Vgs)	22V
Pulsed Drain Current-Max (IDM)	240A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Silicon Carbide (SiC)
Nominal Vgs	2.7 V
Height	21.1mm
Length	122mm
Width	45.6mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant