FDME1024NZT

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Manufacturer part number:FDME1024NZT

Manufacturer:ON Semiconductor

Description:FDME1024NZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDME1024NZT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Number of Pins	6
Weight	25.2mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	ESD PROTECTION
Subcategory	FET General Purpose Power
Max Power Dissipation	1.4W
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Case Connection	DRAIN
Turn On Delay Time	4.5 ns
Power - Max	600mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	66m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 4.5V
Rise Time	2ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	1.7 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	3.8A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	3.4A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	40 pF
Height	500μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant