2SA1179N6-CPA-TB-E Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.A constant collector voltage of 150mA is necessary for high efficiency.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 150mA volts.

2SA1179N6-CPA-TB-E Features

the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA

2SA1179N6-CPA-TB-E Applications

There are a lot of ON Semiconductor 2SA1179N6-CPA-TB-E applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter