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PBHV9540XX

PBHV9540XX

PBHV9540XX

Nexperia USA Inc.

PBHV9540XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV9540XX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Pin Count 3
Power - Max 1.5W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 65MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.16490 $0.1649
PBHV9540XX Product Details

PBHV9540XX Overview


This device has a DC current gain of 140 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PBHV9540XX Features


the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 400mV @ 40mA, 200mA

PBHV9540XX Applications


There are a lot of Nexperia USA Inc. PBHV9540XX applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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