PBHV9540XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV9540XX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
Automotive, AEC-Q101
Part Status
Active
Pin Count
3
Power - Max
1.5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
65MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.16490
$0.1649
PBHV9540XX Product Details
PBHV9540XX Overview
This device has a DC current gain of 140 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PBHV9540XX Features
the DC current gain for this device is 140 @ 100mA 5V the vce saturation(Max) is 400mV @ 40mA, 200mA
PBHV9540XX Applications
There are a lot of Nexperia USA Inc. PBHV9540XX applications of single BJT transistors.