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PBSS303NX,115

PBSS303NX,115

PBSS303NX,115

Nexperia USA Inc.

PBSS303NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS303NX,115 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.1W
Terminal Form FLAT
Frequency 130MHz
Base Part Number PBSS303N
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5.1A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 255mA, 5.1A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 130MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 375ns
Turn On Time-Max (ton) 65ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.163440 $18.16344
10 $17.135321 $171.35321
100 $16.165397 $1616.5397
500 $15.250374 $7625.187
1000 $14.387146 $14387.146
PBSS303NX,115 Product Details

PBSS303NX,115 Overview


DC current gain in this device equals 250 @ 2A 2V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 255mA, 5.1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can take a breakdown input voltage of 30V volts.Single BJT transistor is possible for the collector current to fall as low as 5.1A volts at Single BJT transistors maximum.

PBSS303NX,115 Features


the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 220mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS303NX,115 Applications


There are a lot of Nexperia USA Inc. PBSS303NX,115 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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