PBSS303NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS303NX,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Form
FLAT
Frequency
130MHz
Base Part Number
PBSS303N
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
5.1A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
220mV @ 255mA, 5.1A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
130MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
375ns
Turn On Time-Max (ton)
65ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$18.163440
$18.16344
10
$17.135321
$171.35321
100
$16.165397
$1616.5397
500
$15.250374
$7625.187
1000
$14.387146
$14387.146
PBSS303NX,115 Product Details
PBSS303NX,115 Overview
DC current gain in this device equals 250 @ 2A 2V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 255mA, 5.1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can take a breakdown input voltage of 30V volts.Single BJT transistor is possible for the collector current to fall as low as 5.1A volts at Single BJT transistors maximum.
PBSS303NX,115 Features
the DC current gain for this device is 250 @ 2A 2V the vce saturation(Max) is 220mV @ 255mA, 5.1A the emitter base voltage is kept at 5V a transition frequency of 130MHz
PBSS303NX,115 Applications
There are a lot of Nexperia USA Inc. PBSS303NX,115 applications of single BJT transistors.