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BC850B,235

  • BC850B,235
  • BC850B,235

BC850B,235

BC850B,235

Nexperia USA Inc.

BC850B,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC850B,235 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC850
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.6 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.677200 $3.6772
10 $3.469057 $34.69057
100 $3.272695 $327.2695
500 $3.087448 $1543.724
1000 $2.912687 $2912.687
BC850B,235 Product Details

BC850B,235 Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.When collector current reaches its maximum, it can reach 100mA volts.

BC850B,235 Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC850B,235 Applications


There are a lot of Nexperia USA Inc. BC850B,235 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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