2SA1774EBTLQ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.Continuous collector voltages of -150mA should be maintained to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.Single BJT transistor can take a breakdown input voltage of 50V volts.Collector current can be as low as 150mA volts at its maximum.
2SA1774EBTLQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
2SA1774EBTLQ Applications
There are a lot of ROHM Semiconductor 2SA1774EBTLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
