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MJD31CRLG

MJD31CRLG

MJD31CRLG

ON Semiconductor

MJD31CRLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD31CRLG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation1.56W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD31
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.56W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage1.2V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9418 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.988562$0.988562
10$0.932605$9.32605
100$0.879817$87.9817
500$0.830016$415.008
1000$0.783034$783.034

MJD31CRLG Product Details

MJD31CRLG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.3MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.In extreme cases, the collector current can be as low as 3A volts.

MJD31CRLG Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

MJD31CRLG Applications


There are a lot of ON Semiconductor MJD31CRLG applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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