PBSS305PZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS305PZ,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
PBSS305P
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 225mA, 4.5A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Turn Off Time-Max (toff)
285ns
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.091284
$2.091284
10
$1.972910
$19.7291
100
$1.861236
$186.1236
500
$1.755883
$877.9415
1000
$1.656493
$1656.493
PBSS305PZ,135 Product Details
PBSS305PZ,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 225mA, 4.5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 100MHz.Breakdown input voltage is 80V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
PBSS305PZ,135 Features
the DC current gain for this device is 120 @ 2A 2V the vce saturation(Max) is 450mV @ 225mA, 4.5A the emitter base voltage is kept at 5V a transition frequency of 100MHz
PBSS305PZ,135 Applications
There are a lot of Nexperia USA Inc. PBSS305PZ,135 applications of single BJT transistors.