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PBSS305PZ,135

PBSS305PZ,135

PBSS305PZ,135

Nexperia USA Inc.

PBSS305PZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS305PZ,135 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 100MHz
Base Part Number PBSS305P
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 225mA, 4.5A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Turn Off Time-Max (toff) 285ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.091284 $2.091284
10 $1.972910 $19.7291
100 $1.861236 $186.1236
500 $1.755883 $877.9415
1000 $1.656493 $1656.493
PBSS305PZ,135 Product Details

PBSS305PZ,135 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 225mA, 4.5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 100MHz.Breakdown input voltage is 80V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.

PBSS305PZ,135 Features


the DC current gain for this device is 120 @ 2A 2V
the vce saturation(Max) is 450mV @ 225mA, 4.5A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS305PZ,135 Applications


There are a lot of Nexperia USA Inc. PBSS305PZ,135 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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