PBSS306NZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS306NZ,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
110MHz
Base Part Number
PBSS306N
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
700mW
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5.1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 255mA, 5.1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
110MHz
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.182980
$2.18298
10
$2.059415
$20.59415
100
$1.942844
$194.2844
500
$1.832872
$916.436
1000
$1.729124
$1729.124
PBSS306NZ,135 Product Details
PBSS306NZ,135 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.When VCE saturation is 300mV @ 255mA, 5.1A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.110MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.The maximum collector current is 5.1A volts.
PBSS306NZ,135 Features
the DC current gain for this device is 100 @ 2A 2V the vce saturation(Max) is 300mV @ 255mA, 5.1A the emitter base voltage is kept at 5V a transition frequency of 110MHz
PBSS306NZ,135 Applications
There are a lot of Nexperia USA Inc. PBSS306NZ,135 applications of single BJT transistors.