2SC6082-EPN-1E

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Manufacturer part number:2SC6082-EPN-1E

Manufacturer:ON Semiconductor

Description:2SC6082-EPN-1E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2SC6082-EPN-1E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Surface Mount
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	2W
Power - Max	2W
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	400mV
Max Collector Current	15A
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 330mA 2V
Current - Collector Cutoff (Max)	10μA ICBO
Vce Saturation (Max) @ Ib, Ic	400mV @ 375mA, 7.5A
Collector Emitter Breakdown Voltage	50V
Frequency - Transition	195MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$1.408000	$1.408
10	$1.328302	$13.28302
100	$1.253115	$125.3115
500	$1.182184	$591.092
1000	$1.115268	$1115.268

2SC6082-EPN-1E Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 330mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 375mA, 7.5A.A maximum collector current of 15A volts is possible.