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JAN2N3501L

JAN2N3501L

JAN2N3501L

Microsemi Corporation

JAN2N3501L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3501L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/366
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 150V
Collector Base Voltage (VCBO) 150V
Turn Off Time-Max (toff) 1150ns
Turn On Time-Max (ton) 115ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
103 $9.51825 $980.37975
JAN2N3501L Product Details

JAN2N3501L Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 400mV @ 15mA, 150mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.

JAN2N3501L Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA

JAN2N3501L Applications


There are a lot of Microsemi Corporation JAN2N3501L applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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