2N3055 Description

The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor that is housed in a Jedec TO-3 metal casing. Power switching circuits, series and shunt regulators, output stages, and high fidelity amplifiers are among the applications for the 2N3055 transistor. MJ2955 is the complementary PNP type.

2N3055 Features

• The excellent safe operating area

• The low collector-emitter saturation voltage

• Medium power transistor

• Pb?free packages are available

• DC current gain (hFE) up to 70

• With hfe improved linearity

• Complementary NPN - PNP transistors

• The maximum voltage across collector and emitter: 60V DC

• Maximum current allowed through collector: 15A DC

• The maximum voltage across base and emitter: 7V DC

• Maximum current allowed through base: 7A DC

• The maximum voltage across collector and base: 100V DC

• Operating temperature range: -65oC to +200oC

• Total power dissipation: 115W

2N3055 Applications

• PWM applications

• Regulator circuits

• Power switching circuits

• Amplifier circuits

• Switch-mode power supply

• Signal Amplifiers