FSB749 Overview

In this device, the DC current gain is 100 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3A).As a result, the part has a transition frequency of 100MHz.The breakdown input voltage is 25V volts.A maximum collector current of 3A volts is possible.

FSB749 Features

the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz

FSB749 Applications

There are a lot of ON Semiconductor FSB749 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter