PBSS305PD,115 Overview

In this device, the DC current gain is 145 @ 1A 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 395mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 395mV @ 300mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A transition frequency of 110MHz is present in the part.This device can take an input voltage of 100V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

PBSS305PD,115 Features

the DC current gain for this device is 145 @ 1A 2V
a collector emitter saturation voltage of 395mV
the vce saturation(Max) is 395mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz

PBSS305PD,115 Applications

There are a lot of Nexperia USA Inc. PBSS305PD,115 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface