NJW0281G

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Manufacturer part number:NJW0281G

Manufacturer:ON Semiconductor

Description:NJW0281G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NJW0281G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Surface Mount	NO
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	150W
Frequency	30MHz
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	150W
Transistor Application	AMPLIFIER
Gain Bandwidth Product	30MHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	250V
Max Collector Current	15A
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 3A 5V
Current - Collector Cutoff (Max)	10μA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 500mA, 5A
Collector Emitter Breakdown Voltage	250V
Transition Frequency	30MHz
Collector Emitter Saturation Voltage	1V
Collector Base Voltage (VCBO)	250V
Emitter Base Voltage (VEBO)	5V
hFE Min	75
Height	20.1mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free