FJPF2145TU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 200mA 5V.As it features a collector emitter saturation voltage of 159mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 300mA, 1.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.28.4MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

FJPF2145TU Features

the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz

FJPF2145TU Applications

There are a lot of ON Semiconductor FJPF2145TU applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter