2SA1588-Y,LF Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.An input voltage of 30V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 500mA volts.

2SA1588-Y,LF Features

the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SA1588-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1588-Y,LF applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter