PBSS4240XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4240XX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.35W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
PBSS4240
Pin Count
3
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
140mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
150MHz
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.10854
$0.10854
PBSS4240XX Product Details
PBSS4240XX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 140mV @ 50mA, 500mA.
PBSS4240XX Features
the DC current gain for this device is 300 @ 500mA 5V the vce saturation(Max) is 140mV @ 50mA, 500mA
PBSS4240XX Applications
There are a lot of Nexperia USA Inc. PBSS4240XX applications of single BJT transistors.