PBSS4240XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4240XX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.35W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
PBSS4240
Pin Count
3
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
140mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
150MHz
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS4240XX Product Details
PBSS4240XX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 140mV @ 50mA, 500mA.
PBSS4240XX Features
the DC current gain for this device is 300 @ 500mA 5V the vce saturation(Max) is 140mV @ 50mA, 500mA
PBSS4240XX Applications
There are a lot of Nexperia USA Inc. PBSS4240XX applications of single BJT transistors.