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PBSS4320T,215

  • PBSS4320T,215
  • PBSS4320T,215

PBSS4320T,215

PBSS4320T,215

Nexperia USA Inc.

PBSS4320T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4320T,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PBSS4320
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Power - Max 540mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 310mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
hFE Min 220
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.156320 $6.15632
10 $5.807849 $58.07849
100 $5.479103 $547.9103
500 $5.168965 $2584.4825
1000 $4.876382 $4876.382
PBSS4320T,215 Product Details

PBSS4320T,215 Overview


This device has a DC current gain of 220 @ 1A 2V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 310mV @ 300mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.

PBSS4320T,215 Features


the DC current gain for this device is 220 @ 1A 2V
the vce saturation(Max) is 310mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS4320T,215 Applications


There are a lot of Nexperia USA Inc. PBSS4320T,215 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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