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BCP5416E6433HTMA1

BCP5416E6433HTMA1

BCP5416E6433HTMA1

Rochester Electronics, LLC

BCP5416E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BCP5416E6433HTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.24000 $0.24
500 $0.2376 $118.8
1000 $0.2352 $235.2
1500 $0.2328 $349.2
2000 $0.2304 $460.8
2500 $0.228 $570
BCP5416E6433HTMA1 Product Details

BCP5416E6433HTMA1 Overview


In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of PG-SOT223-4.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BCP5416E6433HTMA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of PG-SOT223-4

BCP5416E6433HTMA1 Applications


There are a lot of Rochester Electronics, LLC BCP5416E6433HTMA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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