MMBT3906,215 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.A collector emitter saturation voltage of -400mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.The base voltage of the emitter can be kept at -6V to achieve high efficiency.In this part, there is a transition frequency of 250MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible to have a collector current as low as -200mA volts at Single BJT transistors maximum.

MMBT3906,215 Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 250MHz

MMBT3906,215 Applications

There are a lot of Nexperia USA Inc. MMBT3906,215 applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface