PBSS4330PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4330PA,115 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Base Part Number
PBSS4330
Pin Count
3
Element Configuration
Single
Power - Max
2.1W
Gain Bandwidth Product
210MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
30V
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
180
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.279840
$0.27984
10
$0.264000
$2.64
100
$0.249057
$24.9057
500
$0.234959
$117.4795
1000
$0.221659
$221.659
PBSS4330PA,115 Product Details
PBSS4330PA,115 Overview
This device has a DC current gain of 270 @ 1A 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The breakdown input voltage is 30V volts.Collector current can be as low as 3A volts at its maximum.
PBSS4330PA,115 Features
the DC current gain for this device is 270 @ 1A 2V the vce saturation(Max) is 300mV @ 300mA, 3A the emitter base voltage is kept at 6V
PBSS4330PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS4330PA,115 applications of single BJT transistors.