MJB44H11T4G Overview

In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.As a result, the part has a transition frequency of 50MHz.Input voltage breakdown is available at 80V volts.Collector current can be as low as 10A volts at its maximum.

MJB44H11T4G Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz

MJB44H11T4G Applications

There are a lot of ON Semiconductor MJB44H11T4G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface