STD888T4 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.There is a breakdown input voltage of 30V volts that it can take.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
STD888T4 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STD888T4 Applications
There are a lot of STMicroelectronics STD888T4 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
