PBSS4350D,125 Overview

In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 290mV @ 200mA, 2A.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.As a result, it can handle voltages as low as 50V volts.Maximum collector currents can be below 3A volts.

PBSS4350D,125 Features

the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PBSS4350D,125 Applications

There are a lot of Nexperia USA Inc. PBSS4350D,125 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface