PBSS4350T,215 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1A 2V.When VCE saturation is 370mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.In this part, there is a transition frequency of 100MHz.A breakdown input voltage of 50V volts can be used.Maximum collector currents can be below 2A volts.

PBSS4350T,215 Features

the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS4350T,215 Applications

There are a lot of Nexperia USA Inc. PBSS4350T,215 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter