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PBSS5230QAZ

  • PBSS5230QAZ
  • PBSS5230QAZ

PBSS5230QAZ

PBSS5230QAZ

Nexperia USA Inc.

PBSS5230QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5230QAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Power - Max 325mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 170MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.499058 $0.499058
10 $0.470810 $4.7081
100 $0.444160 $44.416
500 $0.419019 $209.5095
1000 $0.395301 $395.301
PBSS5230QAZ Product Details

PBSS5230QAZ Overview


In this device, the DC current gain is 60 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 210mV @ 50mA, 1A means Ic has reached its maximum value(saturated).The device has a 30V maximal voltage - Collector Emitter Breakdown.

PBSS5230QAZ Features


the DC current gain for this device is 60 @ 2A 2V
the vce saturation(Max) is 210mV @ 50mA, 1A

PBSS5230QAZ Applications


There are a lot of Nexperia USA Inc. PBSS5230QAZ applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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