BC337-40RL1G Overview

In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.Parts of this part have transition frequencies of 210MHz.The breakdown input voltage is 45V volts.A maximum collector current of 800mA volts is possible.

BC337-40RL1G Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 210MHz

BC337-40RL1G Applications

There are a lot of ON Semiconductor BC337-40RL1G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver