FJAF4210YTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 90 @ 3A 4V.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.The part has a transition frequency of 30MHz.A maximum collector current of 10A volts can be achieved.
FJAF4210YTU Features
the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz
FJAF4210YTU Applications
There are a lot of ON Semiconductor FJAF4210YTU applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
