BD434S Overview
In this device, the DC current gain is 40 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at -5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.A transition frequency of 3MHz is present in the part.Maximum collector currents can be below 4A volts.
BD434S Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD434S Applications
There are a lot of ON Semiconductor BD434S applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
