BD434S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD434S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-22V
Max Power Dissipation
36W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-4A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD434
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
22V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
22V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
-200mV
Collector Base Voltage (VCBO)
-22V
Emitter Base Voltage (VEBO)
-5V
hFE Min
50
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.61000
$0.61
10
$0.54100
$5.41
100
$0.41470
$41.47
500
$0.32782
$163.91
1,000
$0.26225
$0.26225
BD434S Product Details
BD434S Overview
In this device, the DC current gain is 40 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at -5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.A transition frequency of 3MHz is present in the part.Maximum collector currents can be below 4A volts.
BD434S Features
the DC current gain for this device is 40 @ 10mA 5V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -4A a transition frequency of 3MHz
BD434S Applications
There are a lot of ON Semiconductor BD434S applications of single BJT transistors.