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BD434S

BD434S

BD434S

ON Semiconductor

BD434S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD434S Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -22V
Max Power Dissipation 36W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -4A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD434
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 22V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 22V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage -200mV
Collector Base Voltage (VCBO) -22V
Emitter Base Voltage (VEBO) -5V
hFE Min 50
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.61000 $0.61
10 $0.54100 $5.41
100 $0.41470 $41.47
500 $0.32782 $163.91
1,000 $0.26225 $0.26225
BD434S Product Details

BD434S Overview


In this device, the DC current gain is 40 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at -5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.A transition frequency of 3MHz is present in the part.Maximum collector currents can be below 4A volts.

BD434S Features


the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD434S Applications


There are a lot of ON Semiconductor BD434S applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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