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BD17516STU

BD17516STU

BD17516STU

ON Semiconductor

BD17516STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD17516STU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 weeks ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 30W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 800mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.573372 $18.573372
10 $17.522049 $175.22049
100 $16.530235 $1653.0235
500 $15.594562 $7797.281
1000 $14.711850 $14711.85
BD17516STU Product Details

BD17516STU Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 800mV allows maximum design flexibility.A VCE saturation (Max) of 800mV @ 100mA, 1A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.This device can take an input voltage of 45V volts before it breaks down.During maximum operation, collector current can be as low as 3A volts.

BD17516STU Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

BD17516STU Applications


There are a lot of ON Semiconductor BD17516STU applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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