MMBTA42LT1HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMBTA42LT1HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
360mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
70MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
24,000
$0.04804
$1.15296
MMBTA42LT1HTSA1 Product Details
MMBTA42LT1HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 30mA 10V DC current gain.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package SOT-23-3 contains the product.Device displays Collector Emitter Breakdown (300V maximal voltage).
MMBTA42LT1HTSA1 Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA the supplier device package of SOT-23-3
MMBTA42LT1HTSA1 Applications
There are a lot of Rochester Electronics, LLC MMBTA42LT1HTSA1 applications of single BJT transistors.