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MMBTA42LT1HTSA1

MMBTA42LT1HTSA1

MMBTA42LT1HTSA1

Rochester Electronics, LLC

MMBTA42LT1HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MMBTA42LT1HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 360mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 70MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
24,000 $0.04804 $1.15296
MMBTA42LT1HTSA1 Product Details

MMBTA42LT1HTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 30mA 10V DC current gain.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package SOT-23-3 contains the product.Device displays Collector Emitter Breakdown (300V maximal voltage).

MMBTA42LT1HTSA1 Features


the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the supplier device package of SOT-23-3

MMBTA42LT1HTSA1 Applications


There are a lot of Rochester Electronics, LLC MMBTA42LT1HTSA1 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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