PBSS5240ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS5240ZX Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Max Power Dissipation
650mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
650mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
150MHz
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS5240ZX Product Details
PBSS5240ZX Overview
DC current gain in this device equals 300 @ 1mA 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 200mA, 2A.The part has a transition frequency of 150MHz.Collector current can be as low as 2A volts at its maximum.
PBSS5240ZX Features
the DC current gain for this device is 300 @ 1mA 5V the vce saturation(Max) is 650mV @ 200mA, 2A a transition frequency of 150MHz
PBSS5240ZX Applications
There are a lot of Nexperia USA Inc. PBSS5240ZX applications of single BJT transistors.