BCW65CLT1 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at 800mA to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.In the part, the transition frequency is 100MHz.Collector current can be as low as 800mA volts at its maximum.

BCW65CLT1 Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz

BCW65CLT1 Applications

There are a lot of ON Semiconductor BCW65CLT1 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter