ZTX958STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX958STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-400V
Max Power Dissipation
1.2W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
85MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX958
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Transistor Application
SWITCHING
Gain Bandwidth Product
85MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
85MHz
Collector Emitter Saturation Voltage
-400mV
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
-6V
Continuous Collector Current
-500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.59285
$1.1857
ZTX958STZ Product Details
ZTX958STZ Overview
In this device, the DC current gain is 100 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -400mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 100mA, 500mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 85MHz is present in the part.In extreme cases, the collector current can be as low as 500mA volts.
ZTX958STZ Features
the DC current gain for this device is 100 @ 500mA 10V a collector emitter saturation voltage of -400mV the vce saturation(Max) is 400mV @ 100mA, 500mA the emitter base voltage is kept at -6V the current rating of this device is -500mA a transition frequency of 85MHz
ZTX958STZ Applications
There are a lot of Diodes Incorporated ZTX958STZ applications of single BJT transistors.